| Title: | Rugged, high-voltage RF transistor uses vertical process, yielding better gain |
| Price: | $15.00 |
| Publication Date: | May 01, 2008 |
| Source: | EDN |
| Author: | Paul Rako |
| Brief Excerpt: | Rugged, high-voltage RF transistor uses vertical process, yielding better gainby Paul RakoStart-up HVVi recently introduced the three-member HVVFET (high-voltage-vertical-field-effect transistor) family of RF-transistor products. Targeting... |
| Word Count: | 409 |
| Format: | 
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